Samsung Electronics is reportedly set to use Taiwan Semiconductor Manufacturing Company’s (TSMC) advanced 3-nanometre manufacturing process to produce components for Nvidia’s next-generation high-bandwidth memory (HBM) chips.
According to a report by the Seoul Economic Daily published on Sunday, October 18, Nvidia has asked Samsung, SK Hynix and Micron Technology to adopt TSMC’s 3nm process for the base dies used in its custom Nvidia HBM (NVHBM) products.
The reported move would mark the first time Samsung and TSMC have collaborated at the HBM manufacturing stage, bringing two major semiconductor competitors together to meet Nvidia’s technical requirements.
The custom memory technology integrates Nvidia’s memory controller into the base die, with the aim of improving performance and standardising production across multiple suppliers.
Samsung reportedly accepted Nvidia’s requirements following an internal review. However, the South Korean company plans to maintain its in-house manufacturing approach for standard HBM products and custom memory solutions developed for other customers.
The company is also reportedly exploring whether its own foundry facilities could manufacture NVHBM base dies if demand exceeds TSMC’s available production capacity.
The development highlights the growing importance of advanced memory technology as demand for artificial intelligence chips and computing infrastructure continues to expand.
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